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Self-Powered Single-Channel Isolated GaN FET Gate Driver with Power-Thru Integrated Isolated Bias Supply

AHV85110

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Power-Thru Integrated Isolated Bias Supply

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Description

Top Features

Typical Applications

Packaging

The AHV85110 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

The driver has fast propagation delay and high peak source/ sink capability to efficiently drive GaN FETs in high-frequency designs. High CMTI combined with isolated outputs for both bias power and drive make it ideal in applications requiring isolation, level-shifting, or ground separation for noise immunity.

  • Transformer isolation barrier
  • Power-Thru integrated isolated bias
    • No need for high-side bootstrap
    • No need for external secondary-side bias  
  • AEC-Q100 Grade 2 qualification
  • 50 ns propagation delay
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 10.5 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity
  • Creepage distance 8.4 mm
  • Safety Regulatory Approvals
    • 5 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1 kV pk maximum working isolation voltage

The device is available in a 12-pin, low-profile surface-mount NH package. It measures 10 mm × 7.66 mm × 2.41 mm. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

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Part Number Specifications and Availability

HV Isolated Evaluation Boards

EVK PN Switch Supplier / PN Description Gate Driver Used
APEK85110KNH-01-T-MH Evaluation Board User Guide (GaN Systems FETs) E-Mode GaN GaN Systems GS66516B Half-bridge bipolar driver-switch board AHV85110 Buy Now
APEK85110KNH-05-T-MH Evaluation Board User Guide (Nexperia FETs) E-Mode GaN Nexperia GAN080-650EBE Half-bridge bipolar driver-switch board AHV85110 Buy Now
APEK85110KNH-06-T Evaluation Board User Guide (Transphorm FETs) GaN Transphorm TP65H070G4QS Half-bridge bipolar driver-switch board AHV85110 Buy Now

AHV85110 Product Overview

The AHV85110 isolated gate driver is optimized for driving GaNFETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap.

Documentation and Resources

Documentation

Design Tools

Filter Document Type:
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All Types Application Note Brochure Guide Infographic Technical Article
Documents Found: 32
Document Type Document Name
Application Note
FET Gate Drive and Bipolar Output Applicable to AHV85110KNHTR Gate Drivers
Application Note
Minimizing PCB Parasitic Effects with Optimum Layout of the Gate Driver Loop Applicable to AHV85110 AND AHV85111 Gate Drivers
Application Note
Design and Application Guide for AHV85110
Brochure
Brochure: The AHV85110 Overview
Brochure
Comfort Through Sustainability - Unlock the Power of Heat Pump Innovation
Brochure
Brochure: Solar Energy Harvesting
Brochure
xEV Thermal Management System Brochure
Brochure
DC Fast Charging: Faster and Farther
Guide
AHV85110 Simplis Modeling Guide
Guide
APEK85110KNH-06-T Evaluation Board User Guide (Transphorm FETs)
Guide
APEK85110KNH-05-T-MH Evaluation Board User Guide (Nexperia FETs)
Guide
APEK85110KNH-01-T-MH Evaluation Board User Guide (GaN Systems FETs)
Infographic
Power-Thru-Technology Infographic
Technical Article
Simplify Designs and Reduce Overall Systems Cost by Eliminating External Power Supplies
Technical Article
Solving the Challenges of Increasing Power Density by Reducing Number of Power Rails
Technical Article
Solving Gate Drive Challenges with Technology for Improved Power Design
Filter Document Type:
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All Types Device Selection Tool Simulation Tool
Documents Found: 32
Document Type Document Name
Device Selection Tool
GaNFET Mapping Tool
Simulation Tool
AHV85110 Bipolar Simplis Model
Simulation Tool
AHV85110 Unipolar Simplis Model