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AHV85110: Self-Powered Single-Channel Isolated GaNFET Gate Driver with Power-Thru Integrated Isolated Bias Supply

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Power-Thru Integrated Isolated Bias Supply

AHV85110 ECAD Model
AHV85110 Datasheet
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Description

Top Features

Typical Applications

Packaging

The AHV85110 isolated gate driver is optimized for driving GaNFETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

The driver has fast propagation delay and high peak source/ sink capability to efficiently drive GaNFETs in high-frequency designs. High CMTI combined with isolated outputs for both bias power and drive make it ideal in applications requiring isolation, level-shifting, or ground separation for noise immunity.

  • Transformer isolation barrier
  • Power-Thru integrated isolated bias
    • No need for high-side bootstrap
    • No need for external secondary-side bias  
  • AEC-Q100 Grade 2 qualification
  • 50 ns propagation delay
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 10.5 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity
  • Creepage distance 8.4 mm
  • Safety Regulatory Approvals
    • 5 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1 kV pk maximum working isolation voltage
Self-Powered Single-Channel Isolated GaNFET Gate Driver with Power-Thru Integrated Isolated Bias Supply

The device is available in a 12-pin, low-profile surface-mount NH package. It measures 10 mm × 7.66 mm × 2.41 mm. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

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Part Number Specifications and Availability

HV Isolated Gate drivers

Part Number Switch #channels Polarity Working Voltage Isolation Qualification Tape&Real Datasheet Samples
AHV85110KNHTR Switch GaN 1 Unipolar Working Voltage630 Isolation5kV AEC-Q100, grade 2 13", 1500 pcs Datasheetdownload Samplescontact our sales team
AHV85110KNHLU Switch GaN 1 Unipolar Working Voltage630 Isolation5kV   13", 200 pcs Datasheetdownload Samplescontact our sales team

 

HV Isolated Evaluation Boards

EVK PN Switch Supplier / PN Description Gate driver used Check free sample eligibility
EVK nameAPEK85110KNH-01-T-MH SwitchE-Mode GaN GaN Systems GS66516B DescriptionHalf-bridge bipolar driver-switch board Gate driver usedAHV85110 Samplescontact our sales team
EVK nameAPEK85110KNH-05-T-MH SwitchE-Mode GaN Nexperia GAN080-650EBE DescriptionHalf-bridge bipolar driver-switch board Gate driver usedAHV85110 Samplescontact our sales team
EVK nameAPEK85110KNH-06-T-MH SwitchGaN Supplier / PNTransphorm TP65H070G4QS DescriptionHalf-bridge bipolar driver-switch board Gate driver usedAHV85110 Samplescontact our sales team

Documentation and Resources