Self-Powered Isolated GaN FET Driver with Integrated Bias Supply

AHV85110

The AHV85110 simplifies isolated gate drive designs for GaN FETs, with an integrated bias supply that eliminates the need for external components. Offers high dv/dt immunity, fast propagation delay, and robust protection features.

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Evaluation Board

LiveBench

Product Details

Top Features

Transformer isolation barrier
Power-Thru integrated isolated bias
- No need for high-side bootstrap
- No need for external secondary-side bias
AEC-Q100 Grade 2 qualification
50 ns propagation delay
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
Supply voltage 10.5 V < VDRV < 13.2 V
Undervoltage lockout on primary VDRV and secondary VSEC
Enable pin with fast response
Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
CMTI > 100 V/ns dv/dt immunity
Creepage distance 8.4 mm
Safety Regulatory Approvals
- 5 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage
- 1 kV pk maximum working isolation voltage

Target Application

Part Number Specifications and Availability

HV Isolated Evaluation Boards

EVK PN	Switch	Supplier / PN	Description	Gate Driver Used
APEK85110KNH-01-T-MH Evaluation Board User Guide (GaN Systems FETs)	E-Mode GaN	GaN Systems GS66516B	Half-bridge bipolar driver-switch board	AHV85110	Buy Now
APEK85110KNH-05-T-MH Evaluation Board User Guide (Nexperia FETs)	E-Mode GaN	Nexperia GAN080-650EBE	Half-bridge bipolar driver-switch board	AHV85110	Buy Now
APEK85110KNH-06-T Evaluation Board User Guide (Transphorm FETs)	GaN	Transphorm TP65H070G4QS	Half-bridge bipolar driver-switch board	AHV85110	Buy Now

ASEK-30 Product Video

The ASEK-30-INT-ACS-001 is an interface board that routes the required signals from the ASEK-30 to accessible test points, simplifying connectivity for development and evaluation and allowing easily accessible connections.

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