Self-Powered Isolated GaN FET Driver with Regulated Bipolar Output

AHV85111

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The AHV85111 offers precise and flexible gate drive for GaN FETs, with a regulated bipolar output, adjustable positive rail, and integrated bias supply for simplified design and improved dv/dt immunity.

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Product Details

Top Features

Transformer isolation barrier
Power-Thru integrated isolated bias
- No need for high-side bootstrap
- No need for external secondary-side bias
AEC-Q100 Grade 2 qualification
Bipolar drive output with adjustable regulated positive rail
Built-in primary-side 3.3V REF bias output
50ns propagation delay
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
Supply voltage 10.8 V < VDRV < 13.2 V
Undervoltage lockout on primary VDRV and secondary VSEC
Enable pin with fast response
Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
CMTI > 100 V/ns dv/dt immunity
Creepage distance 8.4 mm
Safety Regulatory Approvals
- 5 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage
- 1 kV pk maximum working isolation voltage

Target Application

Part Number Specifications and Availability

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

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