AHV85111: Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive


The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/ negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap. The bipolar output rails with adjustable and regulated positive rail improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

Top Features

  • Power-Thru integrated isolated bias
    • No high-side bootstrap or external secondary-side bias
  • Bipolar drive output, with adjustable regulated positive rail
  • Regulated 3.3 V low power bias output
  • 50 ns propagation delay, with excellent device-to-device
    matching of 5 ns
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)

Part Number Specifications and Availability

Part Number Package Type Temperature RoHS
Part Composition /
RoHS Data
Comments Samples Check Stock
AHV85111KNHTR 12-lead n/a -40°C to 125°C -- View Data New Contact your
local sales rep
Distributor Stock

Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro’s product can reasonably be expected to cause bodily harm.

Isolated ganfet Gate Driver - NH Packaging Image


10 mm × 7.66 mm × 2.53 mm
12-pin low-profile surface mount