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Self-Powered Isolated GaN FET Driver with Regulated Bipolar Output

AHV85111

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive

The AHV85111 offers precise and flexible gate drive for GaN FETs, with a regulated bipolar output, adjustable positive rail, and integrated bias supply for simplified design and improved dv/dt immunity.

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Product Detail
Availability
Documentation and Resources

Top Features

Typical Applications

Packaging

Transformer isolation barrier
Power-Thru integrated isolated bias
- No need for high-side bootstrap
- No need for external secondary-side bias
AEC-Q100 Grade 2 qualification
Bipolar drive output with adjustable regulated positive rail
Built-in primary-side 3.3V REF bias output
50ns propagation delay
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
Supply voltage 10.8 V < VDRV < 13.2 V
Undervoltage lockout on primary VDRV and secondary VSEC
Enable pin with fast response
Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
CMTI > 100 V/ns dv/dt immunity
Creepage distance 8.4 mm
Safety Regulatory Approvals
- 5 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage
- 1 kV pk maximum working isolation voltage

AC-DC and DC-DC converters: Totem-pole PFC, LLC half-/full-bridge, SR drive, multi-level converters, phase-shifted full-bridge
Automotive: EV chargers, OBC
Industrial: Data center, transportation, robotics, audio
Clean Energy: Micro-inverters, string-inverters and solar inverters

The device is available in a compact low-profile surface-mount NH package. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, overtemperature shutdown, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

Self-Powered Single Channel Isolated GaNFET Driver with Regulated Bipolar Output Drive Functional Block Diagram

Self-Powered Single Channel Isolated GaNFET Driver with Regulated Bipolar Output Drive Typical Application Diagram

Part Number Specifications and Availability

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

Documentation and Resources

Documentation

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All Types Application Note Brochure Guide Infographic Technical Article

Documents Found: 32

Document Type	Document Name
Application Note	Minimizing PCB Parasitic Effects with Optimum Layout of the Gate Driver Loop Applicable to AHV85110 AND AHV85111 Gate Drivers
Application Note	AHV85111 Design and Application Guide
Brochure	DC Fast Charging: Faster and Farther
Brochure	Comfort Through Sustainability - Unlock the Power of Heat Pump Innovation
Brochure	Brochure: Solar Energy Harvesting
Guide	APEK85111KNH-02-T-MH- Evaluation Board User Guide
Guide	APEK85111KNH-01-T-MH Evaluation Board User Guide
Infographic	Power-Thru-Technology Infographic
Technical Article	Simplify Designs and Reduce Overall Systems Cost by Eliminating External Power Supplies
Technical Article	Solving the Challenges of Increasing Power Density by Reducing Number of Power Rails
Technical Article	Solving Gate Drive Challenges with Technology for Improved Power Design