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Self-Powered Single-Channel Isolated GaN FET Gate Driver with Regulated Bipolar Output Drive

AHV85111

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive

AHV85111 ECAD Model
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Description

Top Features

Typical Applications

Packaging

The AHV85111 isolated gate driver is optimized for GaN FETs in multiple applications and topologies. An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. The bipolar output rails, with adjustable and regulated positive rail, improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

  • Transformer isolation barrier
  • Power-Thru integrated isolated bias
    • No need for high-side bootstrap
    • No need for external secondary-side bias  
  • AEC-Q100 Grade 2 qualification
  • Bipolar drive output with adjustable regulated positive rail
  • Built-in primary-side 3.3V REF bias output
  • 50ns propagation delay
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 10.8 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity
  • Creepage distance 8.4 mm
  • Safety Regulatory Approvals
    • 5 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1 kV pk maximum working isolation voltage

The device is available in a compact low-profile surface-mount NH package. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, overtemperature shutdown, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

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Part Number Specifications and Availability

HV Isolated Evaluation Boards

EVK PN Switch Supplier / PN Description Gate Driver Used
APEK85111KNH-02-T-MH E-Mode GaN GaN Systems GS66508B Half-bridge bipolar driver-switch board AHV85111 Buy Now

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

Documentation and Resources