AHV85111: Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive

Isolated ganfet Gate Driver - NH Packaging Image


Top Features

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/ negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap. The bipolar output rails with adjustable and regulated positive rail improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.
  • Power-Thru integrated isolated bias
    • No high-side bootstrap or external secondary-side bias
  • Bipolar drive output, with adjustable regulated positive rail
  • Regulated 3.3 V low power bias output
  • 50 ns propagation delay, with excellent device-to-device
    matching of 5 ns
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)

Part Number Specifications and Availability

Part Number Package Type Temperature RoHS
Part Composition /
RoHS Data
Comments Samples Check Stock
AHV85111KNHTR 12-lead n/a -40°C to 125°C -- View Data New Contact your
local sales rep
Distributor Stock

Allegro 的产品不允许在任何由于 Allegro 产品的合理故障造成人身伤害的装置或系统中使用,包括但不限于生命支持装置或系统。

Isolated ganfet Gate Driver - NH Packaging Image


10 mm × 7.66 mm × 2.53 mm
12-pin low-profile surface mount