The AHV85000/40 chipset provides a cost-effective and highly integrated solution for isolated gate drive of GaN FETs, eliminating the need for a separate bias supply and simplifying system design.
Product Details
Product Details
Top Features
- Dual chipset transmits both PWM signal & bias power through a single external isolation transformer
- No high-side bootstrap
- No external secondary-side bias supply
- 50 ns propagation delay (with recommended transformers)
- Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
- Supply voltage 7 V < VDRV < 13.2 V
- Undervoltage lockout on primary VDRV and secondary VSEC
- Enable pin with fast response
- Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
- CMTI > 100 V/ns dv/dt immunity (with recommended transformers)
- Creepage distance > 4 or 8 mm (with recommended transformers)
