Discover the next generation of magnetic sensing
高效功率转换
精确测量整个动态范围,提供更清晰的信号。
采用宽带隙晶体管
GAN 和 SiC 等宽带隙晶体管需要高带宽的电流传感器,XtremeSense TMR 在不牺牲精度和分辨率的情况下实现了这一点。
减少能源足迹
提供所有磁传感产品类别中最低的功耗。
Efficient Power Conversion
Accurately measures the full dynamic range and provides a cleaner signal.
Adoption of Wide Bandgap Transistors
Wide bandgap transistors such as GAN and SiC require high bandwidth current sensors which XtremeSense TMR achieves without sacrificing accuracy and resolution.
Reduce the Energy Footprint
Delivers the lowest power consumption in any magnetic sensing product category.
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TMR is an ideal fit for high growth industries such as automotive, industrial and consumer goods that require higher accuracy, greater bandwidth and lower power consumption.
At the heart of XtremeSense TMR technology is a thin-film magneto-resistive device, which is called a “Magnetic Tunnel Junction” (MTJ). In its simplest form, the MTJ consists of two electric-conducting magnetic layers on either side of a thin but highly robust insulating layer. One magnetic layer has a fixed magnetic moment direction, while the other can change freely to follow the direction of the local magnetic field.
For more information about the performance advantages of TMR versus other magnetic sensing technologies, please read our From Hall Effect to TMR application note.
One of our solution experts will be in touch with you shortly. Keep reading to learn more about our industry leading solutions.
精确测量整个动态范围,提供更清晰的信号。
GAN 和 SiC 等宽带隙晶体管需要高带宽的电流传感器,XtremeSense TMR 在不牺牲精度和分辨率的情况下实现了这一点。
提供所有磁传感产品类别中最低的功耗。
XtremeSense TMR 技术的核心是一个薄膜磁阻器件,称为“磁性隧道结”(MTJ)。在最简单的形式中,MTJ 由薄但非常坚固的绝缘层两侧的两个导电磁层组成。一个磁层具有固定的磁矩方向,另一个可以自由变化以跟随局部磁场的方向。
如需更多了解 TMR 对比其他磁传感技术的性能优势,请阅读我们的从霍尔效应到 TMR 应用说明。