霍尔效应传感器技术
The Hall effect is named after Edwin Hall, who in 1879 discovered that a voltage potential develops across a current-carrying conductive plate when a magnetic field passes through the plate in a direction perpendicular to the plane of the plate.
The fundamental physical principle behind the Hall effect is the Lorentz force. When an electron moves along a direction, v, perpendicular to the applied magnetic field, B, it experiences a force, F, normal to both the applied field and the current flow. In response to this force, the electrons move in a curved path along the conductor (Hall element). Because of this, a net charge, and therefore, a voltage, develops across the plate. By this property, the Hall effect is employed as a magnetic sensor.
Allegro Hall-effect sensor integrated circuits (ICs) incorporate a Hall element with other circuitry, such as op-amps and comparators, to make digital position sensors and speed sensors, as well as linear and angle sensors with analog outputs.
In many cases, Allegro magnetic sensor ICs also incorporate proprietary packaging that includes a “back-bias” magnet to enable the sensor to sense the location of a ferrous (magnetic) target rather than an external magnetic field. The target, e.g., a steel gear, modifies the magnetic field from the integrated magnet. Differential sensing and advanced algorithms are used to optimize performance and compensate for dynamic or sudden air gap changes, vibration, and mechanical tolerances.
Hall-effect sensors also lend themselves to non-contact current sensing, as the current in a conductor creates a magnetic field that is proportional to the magnitude of the current. Unique packaging creates galvanically isolated, small footprint current sensing ICs with very low insertion losses.
Since their inception, Allegro has pioneered several major advances in the field of Hall-effect sensor ICs including chopper stabilization, vertical Hall-effect technology, circular vertical Hall (CVH) arrays, and non-intrusive high-speed hardware diagnostics. Visit each section below to learn more.
Chopper Stabilization
The signals produced by the Hall effect within an integrated circuit are tiny—possibly only microvolts of signal. This signal can easily be corrupted by noise or offsets such as those induced by temperature changes or mechanical stress. State-of-the-art sensors employ chopper stabilization to cancel out these effects.
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Multi-Dimensional Sensing
Traditional Hall-effect sensors are only sensitive to magnetic fields perpendicular to the plane of the die. Sophisticated design and fabrication techniques have made it possible to create vertical Hall elements that allow a sensor to determine field direction as well as magnitude. This can be leveraged to build more sensitive switches, better rotary position sensors, and angle sensors.
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Diagnostics for Built-In Self-Test (BIST)
Hall-effect sensors are often used in safety-critical applications, including automobiles. The development of fast, non-intrusive self-diagnostics (BIST) has enabled sensors to meet the most stringent safety standards including ISO 26262:2011.
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霍尔效应传感器技术
霍尔效应由埃德温·霍尔于 1879 年发现,因此以其名字命名。霍尔效应是指当磁场以垂直于载流导电板平面的方向穿过导电板时,会在导电板上产生电压电位。
霍尔效应背后的基本物理原理是洛伦兹力。 当电子沿着垂直于所施加的磁场 B 的方向 v 移动时,力 F 将作用于电子,这个力垂直于所施加的磁场和电流。 这个力产生的影响是电子沿着导体(霍尔元件)以弯曲路径移动。 因此会在导电板上产生净电荷,从而产生电压。 基于这一特性,霍尔效应被用作磁性传感器。
Allegro 霍尔效应传感器集成电路 (IC) 将霍尔元件与其他电路(如运算放大器和比较器)集成在一起,从而实现数字位置传感器和速度传感器,以及具有模拟输出的线性传感器和角度传感器。
在许多情况下,Allegro 磁性传感器 IC 还采用了包括“反偏”磁体的专有封装,使传感器能够感应含铁(磁性)靶材(而不是外部磁场)的位置。 靶材(例如,钢齿轮)会改变集成磁体产生的磁场。 差分感应和先进算法用于优化性能,并补偿动态或突然的气隙变化、振动和机械公差。
霍尔效应传感器还适用于非接触式电流感应,因为导体中的电流会产生磁场,磁场强度与电流大小成正比。 独特的封装造就了具有电气隔离、小尺寸和极低插入损耗特性的电流感应 IC。
自成立以来,Allegro 在霍尔效应传感器 IC 领域开拓了多项重大进步,包括斩波器稳定、垂直霍尔效应技术、圆形垂直霍尔 (CVH) 阵列和非侵入式高速硬件诊断。 请查看下面每个部分以了解更多信息。
斩波器稳定
霍尔效应在集成电路中产生的信号非常微弱,信号强度可能只有微伏级别。 该信号很可能会被噪声或偏移量破坏,如温度变化或机械应力引起的噪声或偏移量。 先进的传感器会采用斩波器稳定技术来消除这些影响。
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多维传感
传统的霍尔效应传感器只能感应到垂直于芯片平面的磁场。 通过复杂设计和制造技术制造的垂直霍尔元件可以让传感器确定磁场方向和幅度。 这样的元件可用于构建灵敏度更高的开关、性能更好的旋转位置传感器和角度传感器。
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内置自检 (BIST) 诊断
霍尔效应传感器通常用于安全要求极高的应用,包括汽车。 快速、非侵入式的内置自检 (BIST) 的发展使传感器能够满足极为严格的安全标准,包括 ISO 26262:2011。
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见解和创新
Giant Magnetoresistance versus Hall-effect: A Comparison of Technologies for Speed Sensor Applications